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MBR1040

wide temperature range and high tjm schottky barrier rectifiers

厂商名称:Sirectifier Semiconductors

厂商官网:http://www.sirectifier.com

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器件:MBR1040

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MBR1030 thru MBR1045
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
Dimensions TO-220AC
A
C(TAB)
A
C
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
30
35
40
45
V
RMS
V
21
24.5
28
31.5
V
DC
V
30
35
40
45
MBR1030
MBR1035
MBR1040
MBR1045
Symbol
I
(AV)
I
FSM
dv/dt
V
F
I
R
R
OJC
C
J
T
J
T
STG
Characteristics
Maximum Average Forward Rectified Current
@T
C
=125
o
C
Maximum Ratings
10
150
10000
I
F
=20A @T
J
=25
o
C
I
F
=20A @T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
0.84
0.57
0.1
15
2.5
400
-55 to +150
-55 to +175
Unit
A
A
V/us
V
mA
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated V
R
)
Maximum Forward
Voltage
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
C/W
pF
o
o
C
C
NOTES: 1. Thermal Resistance Junction To Case.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
MBR1030 thru MBR1045
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
10
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
8
6
4
RESISTIVE OR
INDUCTIVE LOAD
2
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
10
T
J
= 100 C
10
1.0
T
J
= 75 C
0.1
1.0
0.01
T
J
= 25 C
T
J
= 25 C
0.001
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
0.6
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PULSE WIDTH 300us
2% Duty cycle
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACITANCE , (pF)
1000
T
J
= 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
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参数对比
与MBR1040相近的元器件有:MBR1030。描述及对比如下:
型号 MBR1040 MBR1030
描述 wide temperature range and high tjm schottky barrier rectifiers wide temperature range and high tjm schottky barrier rectifiers
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L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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